Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE

K. C. Yew; S. F. Yoon; Z. Z. Sun; T. K. Ng; W. K. Loke; S. Z. Wang; W. J. Fan

Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE

K. C. Yew^*, S. F. Yoon, Z. Z. Sun, T. K. Ng, W. K. Loke, S. Z. Wang, W. J. Fan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Self-assembled GaInNAs quantum dots (QD) were fabricated on GaAs (001) substrate by solid source molecular beam epitaxy (SSMBE) equipped with a RF nitrogen plasma source. The surface morphology was investigated using atomic-force microscopy (AFM), and the photoluminescence (PL) of the QDs was measured at low temperature (5K). Through these measurements, the effect of indium and nitrogen compositions on the island density, island size, and optical properties were studied. The experiment was carried out with indium and nitrogen composition ranges of 30%-70% and 0.4%-0.8%, respectively. Using high indium composition, an island density of 1 × 10¹¹/cm² was obtained in a single layer of GaInNAs QDs. The AFM results showed that the island size of the QDs is in the range of 20-40mn with an average height of 5-16nm and the highest island density of 1×10¹¹/cm² has been achieved. Low temperature (5K) photoluminescence (PL) wavelength of 1.10 μm to 1.54 μm was detected from these samples.

Original language	English (US)
Pages (from-to)	577-580
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2002
Externally published	Yes
Event	14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: May 12 2002 → May 16 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{506a205727734e6d8b6b99e8cbf01ab9,

title = "Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE",

abstract = "Self-assembled GaInNAs quantum dots (QD) were fabricated on GaAs (001) substrate by solid source molecular beam epitaxy (SSMBE) equipped with a RF nitrogen plasma source. The surface morphology was investigated using atomic-force microscopy (AFM), and the photoluminescence (PL) of the QDs was measured at low temperature (5K). Through these measurements, the effect of indium and nitrogen compositions on the island density, island size, and optical properties were studied. The experiment was carried out with indium and nitrogen composition ranges of 30%-70% and 0.4%-0.8%, respectively. Using high indium composition, an island density of 1 × 1011/cm2 was obtained in a single layer of GaInNAs QDs. The AFM results showed that the island size of the QDs is in the range of 20-40mn with an average height of 5-16nm and the highest island density of 1×1011/cm2 has been achieved. Low temperature (5K) photoluminescence (PL) wavelength of 1.10 μm to 1.54 μm was detected from these samples.",

author = "Yew, {K. C.} and Yoon, {S. F.} and Sun, {Z. Z.} and Ng, {T. K.} and Loke, {W. K.} and Wang, {S. Z.} and Fan, {W. J.}",

year = "2002",

language = "English (US)",

pages = "577--580",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "14th Indium Phosphide and Related Materials Conference ; Conference date: 12-05-2002 Through 16-05-2002",

}

Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE. / Yew, K. C.; Yoon, S. F.; Sun, Z. Z. et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2002, p. 577-580.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE

AU - Yew, K. C.

AU - Yoon, S. F.

AU - Sun, Z. Z.

AU - Ng, T. K.

AU - Loke, W. K.

AU - Wang, S. Z.

AU - Fan, W. J.

PY - 2002

Y1 - 2002

N2 - Self-assembled GaInNAs quantum dots (QD) were fabricated on GaAs (001) substrate by solid source molecular beam epitaxy (SSMBE) equipped with a RF nitrogen plasma source. The surface morphology was investigated using atomic-force microscopy (AFM), and the photoluminescence (PL) of the QDs was measured at low temperature (5K). Through these measurements, the effect of indium and nitrogen compositions on the island density, island size, and optical properties were studied. The experiment was carried out with indium and nitrogen composition ranges of 30%-70% and 0.4%-0.8%, respectively. Using high indium composition, an island density of 1 × 1011/cm2 was obtained in a single layer of GaInNAs QDs. The AFM results showed that the island size of the QDs is in the range of 20-40mn with an average height of 5-16nm and the highest island density of 1×1011/cm2 has been achieved. Low temperature (5K) photoluminescence (PL) wavelength of 1.10 μm to 1.54 μm was detected from these samples.

AB - Self-assembled GaInNAs quantum dots (QD) were fabricated on GaAs (001) substrate by solid source molecular beam epitaxy (SSMBE) equipped with a RF nitrogen plasma source. The surface morphology was investigated using atomic-force microscopy (AFM), and the photoluminescence (PL) of the QDs was measured at low temperature (5K). Through these measurements, the effect of indium and nitrogen compositions on the island density, island size, and optical properties were studied. The experiment was carried out with indium and nitrogen composition ranges of 30%-70% and 0.4%-0.8%, respectively. Using high indium composition, an island density of 1 × 1011/cm2 was obtained in a single layer of GaInNAs QDs. The AFM results showed that the island size of the QDs is in the range of 20-40mn with an average height of 5-16nm and the highest island density of 1×1011/cm2 has been achieved. Low temperature (5K) photoluminescence (PL) wavelength of 1.10 μm to 1.54 μm was detected from these samples.

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M3 - Conference article

AN - SCOPUS:0036053388

SN - 1092-8669

SP - 577

EP - 580

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 14th Indium Phosphide and Related Materials Conference

Y2 - 12 May 2002 through 16 May 2002

ER -

Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE

Abstract

ASJC Scopus subject areas

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