Studies on failure mechanism of ET high Via resistance in wafer fabrication

Hua Younan; Tan Sock Khim; Kun Li; Siping Zhao

doi:10.1109/SMELEC.2006.380765

Studies on failure mechanism of ET high Via resistance in wafer fabrication

Hua Younan^*, Tan Sock Khim, Kun Li, Siping Zhao

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, an ET high Via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.

Original language	English (US)
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	884-886
Number of pages	3
DOIs	https://doi.org/10.1109/SMELEC.2006.380765
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/29/06 → 12/1/06

ASJC Scopus subject areas

General Engineering

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10.1109/SMELEC.2006.380765

Cite this

Younan, H., Khim, T. S., Li, K., & Zhao, S. (2006). Studies on failure mechanism of ET high Via resistance in wafer fabrication. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 884-886). Article 4266748 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.380765

@inproceedings{3a62748bcb194f65b3140ef9cf5535ba,

title = "Studies on failure mechanism of ET high Via resistance in wafer fabrication",

abstract = "In this paper, an ET high Via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.",

author = "Hua Younan and Khim, {Tan Sock} and Kun Li and Siping Zhao",

year = "2006",

doi = "10.1109/SMELEC.2006.380765",

language = "English (US)",

isbn = "0780397312",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "884--886",

booktitle = "ICSE 2006",

note = "2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 ; Conference date: 29-11-2006 Through 01-12-2006",

}

Younan, H, Khim, TS, Li, K & Zhao, S 2006, Studies on failure mechanism of ET high Via resistance in wafer fabrication. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266748, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 884-886, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 11/29/06. https://doi.org/10.1109/SMELEC.2006.380765

Studies on failure mechanism of ET high Via resistance in wafer fabrication. / Younan, Hua; Khim, Tan Sock; Li, Kun et al.
ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 884-886 4266748 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Studies on failure mechanism of ET high Via resistance in wafer fabrication

AU - Younan, Hua

AU - Khim, Tan Sock

AU - Li, Kun

AU - Zhao, Siping

PY - 2006

Y1 - 2006

N2 - In this paper, an ET high Via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.

AB - In this paper, an ET high Via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.

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DO - 10.1109/SMELEC.2006.380765

M3 - Conference contribution

AN - SCOPUS:35148883083

SN - 0780397312

SN - 9780780397316

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 884

EP - 886

BT - ICSE 2006

T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006

Y2 - 29 November 2006 through 1 December 2006

ER -

Studies on failure mechanism of ET high Via resistance in wafer fabrication

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