Abstract
In advanced ULSI technologies, 90nm and beyond, ultra-thin materials play a key role in device performance and its reliability. Conventional optical techniques, which rely on measuring the complex refractive index, do not provide accurate estimate of film thickness for stacks of two or more layers. X-ray reflectivity (XRR) is a reliable method of measuring thickness of composite film stack of total thickness up to 1μm, irrespective of whether it is crystalline or amorphous and, conducting or non-conducting films. In this paper, the results of correlation studies between XRR and TEM are presented. The emphasis is on thickness measurements of different types of films, which are 100Å-15kÅ thick. It will be shown that a good agreement is obtained between the two techniques for film thickness less than 1000Å.
| Original language | English (US) |
|---|---|
| Title of host publication | 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 |
| Pages | 94-97 |
| Number of pages | 4 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia Duration: Dec 4 2004 → Dec 9 2004 |
Other
| Other | 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 |
|---|---|
| Country/Territory | Malaysia |
| City | Kuala Lumpur |
| Period | 12/4/04 → 12/9/04 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering