Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

B. S. Ooi; A. C. Bryce; C. D.W. Wilkinson; J. H. Marsh

doi:10.1063/1.111061

Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

B. S. Ooi^*, A. C. Bryce, C. D.W. Wilkinson, J. H. Marsh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report the damage distribution induced by C₂F₆ and SiCl₄ reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900°C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C ₂F₆ RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl₄ RIE regions.

Original language	English (US)
Pages (from-to)	598-600
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	5
DOIs	https://doi.org/10.1063/1.111061
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{2a04aca8808a4ef0a847f64fcc816ad5,

title = "Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe",

abstract = "We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900°C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 {\AA} before annealing and blue shifts of up to 65 meV after annealing were obtained in C 2F6 RIE regions. A damage depth of 100 {\AA} and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.",

author = "Ooi, {B. S.} and Bryce, {A. C.} and Wilkinson, {C. D.W.} and Marsh, {J. H.}",

year = "1994",

doi = "10.1063/1.111061",

language = "English (US)",

volume = "64",

pages = "598--600",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

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T1 - Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

AU - Ooi, B. S.

AU - Bryce, A. C.

AU - Wilkinson, C. D.W.

AU - Marsh, J. H.

PY - 1994

Y1 - 1994

N2 - We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900°C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C 2F6 RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.

AB - We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900°C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C 2F6 RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.

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U2 - 10.1063/1.111061

DO - 10.1063/1.111061

M3 - Article

AN - SCOPUS:0001222012

SN - 0003-6951

VL - 64

SP - 598

EP - 600

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

Abstract

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