TY - JOUR
T1 -
Study of the pyrolysis process of an hybrid CH
3
SiO
1.5
gel into a SiCO glass
AU - Das, Gobind
AU - Bettotti, Paolo
AU - Ferraioli, Luigi
AU - Raj, Rishi
AU - Mariotto, Gino
AU - Pavesi, Lorenzo
AU - Sorarù, Gian Domenico
PY - 2007/10/18
Y1 - 2007/10/18
N2 -
Silicon oxycarbide samples were prepared by polymer pyrolysis using a methyltriethoxysilane-derived precursor. Transparent crack-free gel samples were obtained from the alkoxide by the sol-gel process. The dried gel samples were pyrolysed at different temperatures in the range between 400 and 1500 °C in Ar atmosphere. The chemical and microstructural evolution during pyrolysis were followed by FT-IR absorption, Raman scattering and photoluminescence (PL). The FT-IR spectra show the change in Si-O-Si asymmetric stretching, C-H
x
, Si-CH
3
stretching vibrational bands. The peak position and shape of these bands were found stable up to 600 °C. Above this temperature, a remarkable change in shape and peak position of Si-O-Si related vibration, reduction in C-H
x
and Si-CH
3
stretching absorption bands have been observed. Degradation of Si-CH
3
and the simultaneous formation of Si-CH
2
-Si via Si-CH
2
-CH
2
-Si is explicitly observed, experimentally. Annealing the sample at 800 °C starts to show the clear presence of D and G bands, related to the free carbon precipitation and its segregation with the temperature. The broad PL spectra centered at around 670 nm for the samples pyrolysed at 1500 °C shows an important information regarding the presence of crystalline SiC.
AB -
Silicon oxycarbide samples were prepared by polymer pyrolysis using a methyltriethoxysilane-derived precursor. Transparent crack-free gel samples were obtained from the alkoxide by the sol-gel process. The dried gel samples were pyrolysed at different temperatures in the range between 400 and 1500 °C in Ar atmosphere. The chemical and microstructural evolution during pyrolysis were followed by FT-IR absorption, Raman scattering and photoluminescence (PL). The FT-IR spectra show the change in Si-O-Si asymmetric stretching, C-H
x
, Si-CH
3
stretching vibrational bands. The peak position and shape of these bands were found stable up to 600 °C. Above this temperature, a remarkable change in shape and peak position of Si-O-Si related vibration, reduction in C-H
x
and Si-CH
3
stretching absorption bands have been observed. Degradation of Si-CH
3
and the simultaneous formation of Si-CH
2
-Si via Si-CH
2
-CH
2
-Si is explicitly observed, experimentally. Annealing the sample at 800 °C starts to show the clear presence of D and G bands, related to the free carbon precipitation and its segregation with the temperature. The broad PL spectra centered at around 670 nm for the samples pyrolysed at 1500 °C shows an important information regarding the presence of crystalline SiC.
KW - FT-IR and Raman spectroscopy
KW - Photoluminescence
KW - Polymer pyrolysis
KW - Silicon oxycarbide
UR - http://www.scopus.com/inward/record.url?scp=34848923718&partnerID=8YFLogxK
U2 - 10.1016/j.vibspec.2007.07.001
DO - 10.1016/j.vibspec.2007.07.001
M3 - Article
AN - SCOPUS:34848923718
SN - 0924-2031
VL - 45
SP - 61
EP - 68
JO - Vibrational Spectroscopy
JF - Vibrational Spectroscopy
IS - 1
ER -