Abstract
Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.
Original language | English (US) |
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Title of host publication | 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Event | 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: Jul 7 2008 → Jul 11 2008 |
Other
Other | 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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Country/Territory | Singapore |
City | Singapore |
Period | 07/7/08 → 07/11/08 |
ASJC Scopus subject areas
- Engineering(all)