Study on SRAM soft failure using planar-view transmission electron microscopy techniques

P. Liu; K. Li; Y. Li; C. Q. Chen; E. Er; J. Teong

doi:10.1109/IPFA.2008.4588194

Study on SRAM soft failure using planar-view transmission electron microscopy techniques

P. Liu^*, K. Li, Y. Li, C. Q. Chen, E. Er, J. Teong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.

Original language	English (US)
Title of host publication	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588194
State	Published - 2008
Externally published	Yes
Event	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: Jul 7 2008 → Jul 11 2008

Other

Other	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/Territory	Singapore
City	Singapore
Period	07/7/08 → 07/11/08

ASJC Scopus subject areas

Engineering(all)

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10.1109/IPFA.2008.4588194

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title = "Study on SRAM soft failure using planar-view transmission electron microscopy techniques",

abstract = "Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.",

author = "P. Liu and K. Li and Y. Li and Chen, {C. Q.} and E. Er and J. Teong",

year = "2008",

doi = "10.1109/IPFA.2008.4588194",

language = "English (US)",

isbn = "1424420393",

booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",

}

Liu, P, Li, K, Li, Y, Chen, CQ, Er, E & Teong, J 2008, Study on SRAM soft failure using planar-view transmission electron microscopy techniques. in 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588194, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 07/7/08. https://doi.org/10.1109/IPFA.2008.4588194

TY - GEN

T1 - Study on SRAM soft failure using planar-view transmission electron microscopy techniques

AU - Liu, P.

AU - Li, K.

AU - Li, Y.

AU - Chen, C. Q.

AU - Er, E.

AU - Teong, J.

PY - 2008

Y1 - 2008

N2 - Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.

AB - Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.

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U2 - 10.1109/IPFA.2008.4588194

DO - 10.1109/IPFA.2008.4588194

M3 - Conference contribution

AN - SCOPUS:51949091030

SN - 1424420393

SN - 9781424420391

BT - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

T2 - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Y2 - 7 July 2008 through 11 July 2008

ER -

Study on SRAM soft failure using planar-view transmission electron microscopy techniques

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