Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Hala H. Alhashim; Mohammed Zahed Mustafa Khan; Mohammed Abdul Majid; Tien Khee Ng; Boon S. Ooi

doi:10.1049/el.2015.1803

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Hala H. Alhashim, Mohammed Zahed Mustafa Khan, Mohammed Abdul Majid, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

Original language	English (US)
Pages (from-to)	1444-1445
Number of pages	2
Journal	Electronics Letters
Volume	51
Issue number	18
DOIs	https://doi.org/10.1049/el.2015.1803
State	Published - Aug 15 2015

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10.1049/el.2015.1803

https://repository.kaust.edu.sa/bitstream/10754/567062/1/EL.2015.1803.pdf

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title = "Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers",

abstract = "Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.",

author = "Alhashim, {Hala H.} and Khan, {Mohammed Zahed Mustafa} and Majid, {Mohammed Abdul} and Ng, {Tien Khee} and Ooi, {Boon S.}",

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T1 - Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

AU - Alhashim, Hala H.

AU - Khan, Mohammed Zahed Mustafa

AU - Majid, Mohammed Abdul

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/8/15

Y1 - 2015/8/15

N2 - Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

AB - Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

UR - http://hdl.handle.net/10754/567062

UR - http://digital-library.theiet.org/content/journals/10.1049/el.2015.1803

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DO - 10.1049/el.2015.1803

M3 - Article

SN - 0013-5194

VL - 51

SP - 1444

EP - 1445

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

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