Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO
                        2
                        /SiO
                        2
                         dielectric mirrors

Tsung Ting Kao; Yuh Shiuan Liu; Md Mahbub Satter; Xiaohang Li; Zachary Lochner; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Shyh Chiang Shen; Jae Hyun Ryou; Alec M. Fischer; Yong Wei; Hongen Xie; Fernando A. Ponce

doi:10.1063/1.4829477

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors

Tsung Ting Kao, Yuh Shiuan Liu, Md Mahbub Satter, Xiaohang Li, Zachary Lochner, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Shyh Chiang Shen^*, Jae Hyun Ryou, Alec M. Fischer, Yong Wei, Hongen Xie, Fernando A. Ponce

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

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37 Scopus citations

Abstract

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al _x Ga _1-x N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm ² . After employing high-reflectivity SiO ₂ /HfO ₂ dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm ² . The internal loss and threshold modal gain can be calculated as 2 cm ^-1 and 10.9 cm ^-1 , respectively.

Original language	English (US)
Article number	211103
Journal	Applied Physics Letters
Volume	103
Issue number	21
DOIs	https://doi.org/10.1063/1.4829477
State	Published - Nov 18 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kao, T. T., Liu, Y. S., Mahbub Satter, M., Li, X., Lochner, Z., Douglas Yoder, P., Detchprohm, T., Dupuis, R. D., Shen, S. C., Ryou, J. H., Fischer, A. M., Wei, Y., Xie, H., & Ponce, F. A. (2013). Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors Applied Physics Letters, 103(21), Article 211103. https://doi.org/10.1063/1.4829477

Kao, Tsung Ting ; Liu, Yuh Shiuan ; Mahbub Satter, Md et al. / Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors In: Applied Physics Letters. 2013 ; Vol. 103, No. 21.

@article{817fe679002643b986e713b6812fc152,

title = " Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO 2 /SiO 2 dielectric mirrors ",

abstract = " We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al x Ga 1-x N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm 2 . After employing high-reflectivity SiO 2 /HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm 2 . The internal loss and threshold modal gain can be calculated as 2 cm -1 and 10.9 cm -1 , respectively.",

author = "Kao, {Tsung Ting} and Liu, {Yuh Shiuan} and {Mahbub Satter}, Md and Xiaohang Li and Zachary Lochner and {Douglas Yoder}, P. and Theeradetch Detchprohm and Dupuis, {Russell D.} and Shen, {Shyh Chiang} and Ryou, {Jae Hyun} and Fischer, {Alec M.} and Yong Wei and Hongen Xie and Ponce, {Fernando A.}",

year = "2013",

month = nov,

day = "18",

doi = "10.1063/1.4829477",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "21",

}

Kao, TT, Liu, YS, Mahbub Satter, M, Li, X, Lochner, Z, Douglas Yoder, P, Detchprohm, T, Dupuis, RD, Shen, SC, Ryou, JH, Fischer, AM, Wei, Y, Xie, H & Ponce, FA 2013, ' Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors ', Applied Physics Letters, vol. 103, no. 21, 211103. https://doi.org/10.1063/1.4829477

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors . / Kao, Tsung Ting; Liu, Yuh Shiuan; Mahbub Satter, Md et al.
In: Applied Physics Letters, Vol. 103, No. 21, 211103, 18.11.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO 2 /SiO 2 dielectric mirrors

AU - Kao, Tsung Ting

AU - Liu, Yuh Shiuan

AU - Mahbub Satter, Md

AU - Li, Xiaohang

AU - Lochner, Zachary

AU - Douglas Yoder, P.

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Shen, Shyh Chiang

AU - Ryou, Jae Hyun

AU - Fischer, Alec M.

AU - Wei, Yong

AU - Xie, Hongen

AU - Ponce, Fernando A.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al x Ga 1-x N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm 2 . After employing high-reflectivity SiO 2 /HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm 2 . The internal loss and threshold modal gain can be calculated as 2 cm -1 and 10.9 cm -1 , respectively.

AB - We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al x Ga 1-x N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm 2 . After employing high-reflectivity SiO 2 /HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm 2 . The internal loss and threshold modal gain can be calculated as 2 cm -1 and 10.9 cm -1 , respectively.

UR - http://www.scopus.com/inward/record.url?scp=84888417187&partnerID=8YFLogxK

U2 - 10.1063/1.4829477

DO - 10.1063/1.4829477

M3 - Article

AN - SCOPUS:84888417187

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211103

ER -

Kao TT, Liu YS, Mahbub Satter M, Li X, Lochner Z, Douglas Yoder P et al. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors Applied Physics Letters. 2013 Nov 18;103(21):211103. doi: 10.1063/1.4829477

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO ₂ /SiO ₂ dielectric mirrors

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