Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Yating Wan; Qiang Li; Alan Y. Liu; Weng W. Chow; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu; Kei May Lau

doi:10.1063/1.4952600

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Yating Wan, Qiang Li, Alan Y. Liu, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform.

Original language	English (US)
Journal	Applied Physics Letters
Volume	108
Issue number	22
DOIs	https://doi.org/10.1063/1.4952600
State	Published - May 30 2016
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4952600

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title = "Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates",

abstract = "Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform.",

author = "Yating Wan and Qiang Li and Liu, {Alan Y.} and Chow, {Weng W.} and Gossard, {Arthur C.} and Bowers, {John E.} and Hu, {Evelyn L.} and Lau, {Kei May}",

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T1 - Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

AU - Wan, Yating

AU - Li, Qiang

AU - Liu, Alan Y.

AU - Chow, Weng W.

AU - Gossard, Arthur C.

AU - Bowers, John E.

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2016/5/30

Y1 - 2016/5/30

N2 - Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform.

AB - Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform.

UR - https://pubs.aip.org/apl/article/108/22/221101/30519/Sub-wavelength-InAs-quantum-dot-micro-disk-lasers

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DO - 10.1063/1.4952600

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VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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