Abstract
A lithographic process based on atomic force microscope (AFM)-induced localized polymerization of a thin film of sulfur, has been demonstrated. The study also used an oxidizing solution of ammonium fluoride and hydrogen peroxide for deep etch transfer. The sulfur-based resist was used as a chemical template for the direct self-assembly of nanoscopic objects. Gold nanocrystals were self-assembled at the desired location through anchoring method onto the free thiols present on the sulfur-based nanostructures. It was observed during the study that sulfur-based etch-resistant nanopatterns was fabricated on a silicon substrate at very high velocities. The study concluded that this method can be used for self-assembly of gold nanocrystals by utilizing chemical functionality. The method can be used to fabricate nanoscale structures with resistivity for etch process and chemical functionality for self-assembly.
Original language | English (US) |
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Pages (from-to) | 4526-4529 |
Number of pages | 4 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 23 |
DOIs | |
State | Published - Dec 2 2008 |
Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering