Superluminescent diodes using quantum dots superlattice

Clara E. Dimas; Hery S. Djie; Boon S. Ooi

doi:10.1016/j.jcrysgro.2005.12.043

Superluminescent diodes using quantum dots superlattice

Clara E. Dimas, Hery S. Djie, Boon S. Ooi^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (<0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 °C) at 105 mA current injection.

Original language	English (US)
Pages (from-to)	153-156
Number of pages	4
Journal	Journal of Crystal Growth
Volume	288
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.043
State	Published - Feb 2 2006
Externally published	Yes
Event	International Conference on Materials for Advanced Technologies - Duration: Jul 4 2005 → Jul 8 2005

Keywords

A1. Quantum dot
B1. Superluminescent diodes
B2. III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/j.jcrysgro.2005.12.043

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@article{b906449ee3634a8a94e7b39a6f436086,

title = "Superluminescent diodes using quantum dots superlattice",

abstract = "We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (<0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 °C) at 105 mA current injection.",

keywords = "A1. Quantum dot, B1. Superluminescent diodes, B2. III-V materials",

author = "Dimas, {Clara E.} and Djie, {Hery S.} and Ooi, {Boon S.}",

year = "2006",

month = feb,

day = "2",

doi = "10.1016/j.jcrysgro.2005.12.043",

language = "English (US)",

volume = "288",

pages = "153--156",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

note = "International Conference on Materials for Advanced Technologies ; Conference date: 04-07-2005 Through 08-07-2005",

}

TY - JOUR

T1 - Superluminescent diodes using quantum dots superlattice

AU - Dimas, Clara E.

AU - Djie, Hery S.

AU - Ooi, Boon S.

PY - 2006/2/2

Y1 - 2006/2/2

N2 - We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (<0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 °C) at 105 mA current injection.

AB - We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (<0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 °C) at 105 mA current injection.

KW - A1. Quantum dot

KW - B1. Superluminescent diodes

KW - B2. III-V materials

UR - http://www.scopus.com/inward/record.url?scp=31644433444&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.12.043

DO - 10.1016/j.jcrysgro.2005.12.043

M3 - Conference article

AN - SCOPUS:31644433444

SN - 0022-0248

VL - 288

SP - 153

EP - 156

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - International Conference on Materials for Advanced Technologies

Y2 - 4 July 2005 through 8 July 2005

ER -

Superluminescent diodes using quantum dots superlattice

Abstract

Keywords

ASJC Scopus subject areas

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