Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

P. Cusumano; B. S. Ooi; A. Saher Helmy; S. G. Ayling; A. C. Bryce; J. H. Marsh; B. Voegele; M. J. Rose

doi:10.1063/1.364295

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO₂ encapsulant layer

P. Cusumano^*, B. S. Ooi, A. Saher Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, B. Voegele, M. J. Rose

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

A phosphorus-doped silica (SiO₂:P) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO₂:P is more dense and void free compared with standard SiO₂ together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO₂ and with SiO₂:P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.

Original language	English (US)
Pages (from-to)	2445-2447
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	5
DOIs	https://doi.org/10.1063/1.364295
State	Published - Mar 1 1997
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.364295

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title = "Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer",

abstract = "A phosphorus-doped silica (SiO2:P) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO2:P is more dense and void free compared with standard SiO2 together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO2 and with SiO2:P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.",

author = "P. Cusumano and Ooi, {B. S.} and Helmy, {A. Saher} and Ayling, {S. G.} and Bryce, {A. C.} and Marsh, {J. H.} and B. Voegele and Rose, {M. J.}",

year = "1997",

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doi = "10.1063/1.364295",

language = "English (US)",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

AU - Cusumano, P.

AU - Ooi, B. S.

AU - Helmy, A. Saher

AU - Ayling, S. G.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Voegele, B.

AU - Rose, M. J.

PY - 1997/3/1

Y1 - 1997/3/1

N2 - A phosphorus-doped silica (SiO2:P) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO2:P is more dense and void free compared with standard SiO2 together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO2 and with SiO2:P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.

AB - A phosphorus-doped silica (SiO2:P) cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO2:P is more dense and void free compared with standard SiO2 together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO2 and with SiO2:P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.

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DO - 10.1063/1.364295

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JF - Journal of Applied Physics

IS - 5

ER -

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO₂ encapsulant layer

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