Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga 2O3. Si-doping appears to have small influence on the surface chemical states of GaN while the influence of Mg-doping appears larger. In addition to a change in the component intensities, Mg-doping also causes the N 1s and Ga 3d peaks to broaden. The ternary AlGaN sample shows aluminum surface segregation, while the undoped InGaN shows indium surface deficiency.
- Metalorganic chemical vapor deposition
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Science(all)
- Electrical and Electronic Engineering
- Computer Science Applications