The interaction between chemisorbed oxygen adatoms (O2(ad) -) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2(ad) - chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2(ad) - chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Nov 7 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)