TY - JOUR
T1 - Surface Electronic States of 18 Valence Electron Half-Heusler Semiconductors
AU - Zhu, Zhiyong
AU - Wang, Hao
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/1/26
Y1 - 2015/1/26
N2 - The surface electronic states of the 18 valence electron half-Heusler semiconductors CoTiSb, CoNbSn and NiTiSn are investigated using ab initio calculations. The electronic structure is found to be dramatically modified by the change in the atomic environment as compared to the bulk. In contrast to the non-magnetic semiconducting nature of the bulk, 2D half-metallic or metallic states with strong spin polarization appear for specific surfaces.
AB - The surface electronic states of the 18 valence electron half-Heusler semiconductors CoTiSb, CoNbSn and NiTiSn are investigated using ab initio calculations. The electronic structure is found to be dramatically modified by the change in the atomic environment as compared to the bulk. In contrast to the non-magnetic semiconducting nature of the bulk, 2D half-metallic or metallic states with strong spin polarization appear for specific surfaces.
UR - http://hdl.handle.net/10754/575638
UR - http://doi.wiley.com/10.1002/admi.201400340
UR - http://www.scopus.com/inward/record.url?scp=84938632450&partnerID=8YFLogxK
U2 - 10.1002/admi.201400340
DO - 10.1002/admi.201400340
M3 - Article
SN - 2196-7350
VL - 2
SP - 1400340
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 4
ER -