TY - JOUR
T1 - Surface Passivation of CIGS Solar Cells Using Gallium Oxide
AU - Garud, Siddhartha
AU - Gampa, Nikhil
AU - Allen, Thomas
AU - Kotipalli, Ratan
AU - Flandre, Denis
AU - Batuk, Maria
AU - Hadermann, Joke
AU - Meuris, Marc
AU - Poortmans, Jef
AU - Smets, Arno
AU - Vermang, Bart
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements.
PY - 2018/2/27
Y1 - 2018/2/27
N2 - This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
AB - This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
UR - http://hdl.handle.net/10754/627470
UR - http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700826/full
UR - http://www.scopus.com/inward/record.url?scp=85045451033&partnerID=8YFLogxK
U2 - 10.1002/pssa.201700826
DO - 10.1002/pssa.201700826
M3 - Article
SN - 1862-6300
VL - 215
SP - 1700826
JO - physica status solidi (a)
JF - physica status solidi (a)
IS - 7
ER -