Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes

Hongping Zhao; Jing Zhang; Guangyu Liu; Nelson Tansu

Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes

Hongping Zhao^*, Jing Zhang, Guangyu Liu, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.

Original language	English (US)
Title of host publication	2011 Conference on Lasers and Electro-Optics
Subtitle of host publication	Laser Science to Photonic Applications, CLEO 2011
State	Published - 2011
Externally published	Yes
Event	2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States Duration: May 1 2011 → May 6 2011

Publication series

Name	2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Other

Other	2011 Conference on Lasers and Electro-Optics, CLEO 2011
Country/Territory	United States
City	Baltimore, MD
Period	05/1/11 → 05/6/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Article 5950735 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

@inproceedings{7bccb7ad67294190897be068d69fd622,

title = "Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes",

abstract = "The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.",

author = "Hongping Zhao and Jing Zhang and Guangyu Liu and Nelson Tansu",

year = "2011",

language = "English (US)",

isbn = "9781557529107",

series = "2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011",

booktitle = "2011 Conference on Lasers and Electro-Optics",

note = "2011 Conference on Lasers and Electro-Optics, CLEO 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

}

Zhao, H, Zhang, J, Liu, G & Tansu, N 2011, Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes. in 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011., 5950735, 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, 2011 Conference on Lasers and Electro-Optics, CLEO 2011, Baltimore, MD, United States, 05/1/11.

Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes. / Zhao, Hongping; Zhang, Jing; Liu, Guangyu et al.
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011. 5950735 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes

AU - Zhao, Hongping

AU - Zhang, Jing

AU - Liu, Guangyu

AU - Tansu, Nelson

PY - 2011

Y1 - 2011

N2 - The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.

AB - The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.

UR - http://www.scopus.com/inward/record.url?scp=80052132887&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:80052132887

SN - 9781557529107

T3 - 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

BT - 2011 Conference on Lasers and Electro-Optics

T2 - 2011 Conference on Lasers and Electro-Optics, CLEO 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes

Abstract

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ASJC Scopus subject areas

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