Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

Hongping Zhao; Jing Zhang; Guangyu Liu; Nelson Tansu

doi:10.1063/1.3580628

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

Hongping Zhao^*, Jing Zhang, Guangyu Liu, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

Double-metallic Au/Ag layers deposited on top of InGaN/GaN quantum wells (QWs) are used to tune the Purcell peak enhancement of the radiative recombination rate for nitride light-emitting diodes. By modifying the Au/Ag thicknesses, the Purcell factor can be widely tuned between the surface plasmon frequencies of Au/GaN and Ag/GaN. Photoluminescence studies demonstrated the concept of the Purcell factor tuning by using the double-metallic Au/Ag layers.

Original language	English (US)
Article number	151115
Journal	Applied Physics Letters
Volume	98
Issue number	15
DOIs	https://doi.org/10.1063/1.3580628
State	Published - Apr 11 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3580628

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title = "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes",

abstract = "Double-metallic Au/Ag layers deposited on top of InGaN/GaN quantum wells (QWs) are used to tune the Purcell peak enhancement of the radiative recombination rate for nitride light-emitting diodes. By modifying the Au/Ag thicknesses, the Purcell factor can be widely tuned between the surface plasmon frequencies of Au/GaN and Ag/GaN. Photoluminescence studies demonstrated the concept of the Purcell factor tuning by using the double-metallic Au/Ag layers.",

author = "Hongping Zhao and Jing Zhang and Guangyu Liu and Nelson Tansu",

note = "Funding Information: This work is supported by U.S. Department of Energy (DE-FC26-08NT01581) and U.S. National Science Foundation (ECCS Nos. 0701421, 1028490). ",

year = "2011",

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doi = "10.1063/1.3580628",

language = "English (US)",

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AU - Zhao, Hongping

AU - Zhang, Jing

AU - Liu, Guangyu

AU - Tansu, Nelson

N1 - Funding Information: This work is supported by U.S. Department of Energy (DE-FC26-08NT01581) and U.S. National Science Foundation (ECCS Nos. 0701421, 1028490).

PY - 2011/4/11

Y1 - 2011/4/11

N2 - Double-metallic Au/Ag layers deposited on top of InGaN/GaN quantum wells (QWs) are used to tune the Purcell peak enhancement of the radiative recombination rate for nitride light-emitting diodes. By modifying the Au/Ag thicknesses, the Purcell factor can be widely tuned between the surface plasmon frequencies of Au/GaN and Ag/GaN. Photoluminescence studies demonstrated the concept of the Purcell factor tuning by using the double-metallic Au/Ag layers.

AB - Double-metallic Au/Ag layers deposited on top of InGaN/GaN quantum wells (QWs) are used to tune the Purcell peak enhancement of the radiative recombination rate for nitride light-emitting diodes. By modifying the Au/Ag thicknesses, the Purcell factor can be widely tuned between the surface plasmon frequencies of Au/GaN and Ag/GaN. Photoluminescence studies demonstrated the concept of the Purcell factor tuning by using the double-metallic Au/Ag layers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

Abstract

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