Surface preparation techniques used for fabricating high-k/metal gate device structures

Engineering

• Metal Gate 100%
• Device Structure 100%
• Surface Preparation 100%
• Gate Stack 75%
• Metal Gate Electrode 75%
• Manufacturing Process 50%
• Gate Dielectric 50%
• Dielectrics 50%
• Polysilicon 25%
• High Dielectric Constant 25%
• Process Flow 25%
• Oxide Thickness 25%

Material Science

• Dielectric Material 100%
• Capacitance 66%
• Device Fabrication 33%
• Permittivity 33%
• Transistor 33%
• High-K Dielectric 33%
• Density 33%
• Oxide Compound 33%

Keyphrases

• Wet Clean 33%
• Transistor Size 33%
• Polysilicon Gate 33%
• Equivalent Thickness 33%