Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

Ahmed Ben Slimane; Adel Najar; Boon S. Ooi; Chao Shen; Dalaver H. Anjum; Damián P. San-Román-Alerigi; Tien Khee Ng

doi:10.1364/ACPC.2013.ATh3B.3

Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

Ahmed Ben Slimane, Adel Najar, Boon S. Ooi, Chao Shen, Dalaver H. Anjum, Damián P. San-Román-Alerigi, Tien Khee Ng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

Original language	English (US)
Title of host publication	OSA Technical Digest (online)
Publisher	The Optical Society
ISBN (Print)	978-1- 55752-989-3
DOIs	https://doi.org/10.1364/ACPC.2013.ATh3B.3
State	Published - 2013

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10.1364/ACPC.2013.ATh3B.3

https://repository.kaust.edu.sa/bitstream/10754/310651/1/ACP-2013-ATh3B.3.pdf

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title = "Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures",

abstract = "We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.",

author = "{Ben Slimane}, Ahmed and Adel Najar and Ooi, {Boon S.} and Chao Shen and Anjum, {Dalaver H.} and San-Rom{\'a}n-Alerigi, {Dami{\'a}n P.} and Ng, {Tien Khee}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2013",

doi = "10.1364/ACPC.2013.ATh3B.3",

language = "English (US)",

isbn = "978-1- 55752-989-3",

booktitle = "OSA Technical Digest (online)",

publisher = "The Optical Society",

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TY - GEN

T1 - Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

AU - Ben Slimane, Ahmed

AU - Najar, Adel

AU - Ooi, Boon S.

AU - Shen, Chao

AU - Anjum, Dalaver H.

AU - San-Román-Alerigi, Damián P.

AU - Ng, Tien Khee

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013

Y1 - 2013

N2 - We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

AB - We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

UR - http://hdl.handle.net/10754/310651

UR - https://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-ATh3B.3

U2 - 10.1364/ACPC.2013.ATh3B.3

DO - 10.1364/ACPC.2013.ATh3B.3

M3 - Conference contribution

SN - 978-1- 55752-989-3

BT - OSA Technical Digest (online)

PB - The Optical Society

ER -

Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

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