TY - JOUR
T1 - Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs
AU - Hwang, David
AU - Mughal, Asad
AU - Pynn, Christopher D.
AU - Nakamura, Shuji
AU - DenBaars, Steven P.
N1 - KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. A portion of this work was done in the UCSB nanofabrication facility, which is part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR05-20415). D.H. and C.D.P. were supported by National Science Foundation Graduate Research Fellowships under Grant No. DGE-1144085. The authors would like to acknowledge Sang Ho Oh and Leah Kuritzky for assistance with device design and modeling.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2017/2/1
Y1 - 2017/2/1
N2 - Ultrasmall blue InGaN micro-light-emitting diodes (μLEDs) with areas from 10-4 to 0.01 mm2 were fabricated to study their optical and electrical properties. The peak external quantum efficiencies (EQEs) of the smallest and largest μLEDs were 40.2 and 48.6%, respectively. The difference in EQE was from nonradiative recombination originating from etching damage. This decrease is less severe than that in red AlInGaP LEDs. The efficiency droop at 900 A/cm2 of the smallest μLED was 45.7%, compared with 56.0% for the largest, and was lower because of improved current spreading. These results show that ultrasmall μLEDs may be fabricated without a significant loss in optical or electrical performance.
AB - Ultrasmall blue InGaN micro-light-emitting diodes (μLEDs) with areas from 10-4 to 0.01 mm2 were fabricated to study their optical and electrical properties. The peak external quantum efficiencies (EQEs) of the smallest and largest μLEDs were 40.2 and 48.6%, respectively. The difference in EQE was from nonradiative recombination originating from etching damage. This decrease is less severe than that in red AlInGaP LEDs. The efficiency droop at 900 A/cm2 of the smallest μLED was 45.7%, compared with 56.0% for the largest, and was lower because of improved current spreading. These results show that ultrasmall μLEDs may be fabricated without a significant loss in optical or electrical performance.
UR - http://hdl.handle.net/10754/678730
UR - https://iopscience.iop.org/article/10.7567/APEX.10.032101
UR - http://www.scopus.com/inward/record.url?scp=85014124875&partnerID=8YFLogxK
U2 - 10.7567/APEX.10.032101
DO - 10.7567/APEX.10.032101
M3 - Article
SN - 1882-0786
VL - 10
SP - 032101
JO - Applied Physics Express
JF - Applied Physics Express
IS - 3
ER -