TY - JOUR
T1 - Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly
AU - Li, Henan
AU - Shi, Yumeng
AU - Li, Lain-Jong
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by National Natural Science Foundation of China (Grant No. 51602200), the(Key)Project of Department of Education of Guangdong Province (Grant No. 2016KZDXM008), Shenzhen Peacock Plan (Grant No. KQTD2016053112042971), Natural Science Foundation of SZU (Grant No. 2017011), and King Abdullah University of Science and Technology, Saudi Arabia.
PY - 2017/11/16
Y1 - 2017/11/16
N2 - Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.
AB - Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.
UR - http://hdl.handle.net/10754/626205
UR - http://www.sciencedirect.com/science/article/pii/S0008622317311442
UR - http://www.scopus.com/inward/record.url?scp=85034851167&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2017.11.030
DO - 10.1016/j.carbon.2017.11.030
M3 - Article
SN - 0008-6223
VL - 127
SP - 602
EP - 610
JO - Carbon
JF - Carbon
ER -