Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition

Yumeng Shi; Christoph Hamsen; Xiaoting Jia; Ki Kang Kim; Alfonso Reina; Mario Hofmann; Allen Long Hsu; Kai Zhang; Henan Li; Zhen Yu Juang; Mildred S. Dresselhaus; Lain Jong Li; Jing Kong

doi:10.1021/nl1023707

Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition

Yumeng Shi, Christoph Hamsen, Xiaoting Jia, Ki Kang Kim, Alfonso Reina, Mario Hofmann, Allen Long Hsu, Kai Zhang, Henan Li, Zhen Yu Juang, Mildred S. Dresselhaus, Lain Jong Li^*, Jing Kong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1093 Scopus citations

Abstract

In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.

Original language	English (US)
Pages (from-to)	4134-4139
Number of pages	6
Journal	Nano Letters
Volume	10
Issue number	10
DOIs	https://doi.org/10.1021/nl1023707
State	Published - Oct 13 2010
Externally published	Yes

Keywords

Hexagonal boron nitride
borazine
chemical vapor deposition

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl1023707

Cite this

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title = "Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition",

abstract = "In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.",

keywords = "Hexagonal boron nitride, borazine, chemical vapor deposition",

author = "Yumeng Shi and Christoph Hamsen and Xiaoting Jia and Kim, {Ki Kang} and Alfonso Reina and Mario Hofmann and Hsu, {Allen Long} and Kai Zhang and Henan Li and Juang, {Zhen Yu} and Dresselhaus, {Mildred S.} and Li, {Lain Jong} and Jing Kong",

year = "2010",

month = oct,

day = "13",

doi = "10.1021/nl1023707",

language = "English (US)",

volume = "10",

pages = "4134--4139",

journal = "Nano Letters",

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T1 - Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition

AU - Shi, Yumeng

AU - Hamsen, Christoph

AU - Jia, Xiaoting

AU - Kim, Ki Kang

AU - Reina, Alfonso

AU - Hofmann, Mario

AU - Hsu, Allen Long

AU - Zhang, Kai

AU - Li, Henan

AU - Juang, Zhen Yu

AU - Dresselhaus, Mildred S.

AU - Li, Lain Jong

AU - Kong, Jing

PY - 2010/10/13

Y1 - 2010/10/13

N2 - In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.

AB - In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.

KW - Hexagonal boron nitride

KW - borazine

KW - chemical vapor deposition

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SN - 1530-6984

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EP - 4139

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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