Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Bandar Alshehri; Karim Dogheche; Sofiane Belahsene; Bilal Janjua; Abderrahim Ramdane; Gilles Patriarche; Tien Khee Ng; Boon S-Ooi; Didier Decoster; Elhadj Dogheche

doi:10.1557/adv.2016.417

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Bilal Janjua, Abderrahim Ramdane, Gilles Patriarche, Tien Khee Ng, Boon S-Ooi, Didier Decoster, Elhadj Dogheche

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Abstract

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

Original language	English (US)
Pages (from-to)	1735-1742
Number of pages	8
Journal	MRS Advances
Volume	1
Issue number	23
DOIs	https://doi.org/10.1557/adv.2016.417
State	Published - Jun 7 2016

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@article{04679bafb99345468ef11e6a9280d896,

title = "Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics",

abstract = "In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.",

author = "Bandar Alshehri and Karim Dogheche and Sofiane Belahsene and Bilal Janjua and Abderrahim Ramdane and Gilles Patriarche and Ng, {Tien Khee} and Boon S-Ooi and Didier Decoster and Elhadj Dogheche",

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T1 - Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

AU - Alshehri, Bandar

AU - Dogheche, Karim

AU - Belahsene, Sofiane

AU - Janjua, Bilal

AU - Ramdane, Abderrahim

AU - Patriarche, Gilles

AU - Ng, Tien Khee

AU - S-Ooi, Boon

AU - Decoster, Didier

AU - Dogheche, Elhadj

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2016/6/7

Y1 - 2016/6/7

N2 - In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

AB - In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

UR - http://hdl.handle.net/10754/627281

UR - https://www.cambridge.org/core/product/identifier/S2059852116004175/type/journal_article

UR - http://www.scopus.com/inward/record.url?scp=85041295514&partnerID=8YFLogxK

U2 - 10.1557/adv.2016.417

DO - 10.1557/adv.2016.417

M3 - Article

SN - 2059-8521

VL - 1

SP - 1735

EP - 1742

JO - MRS Advances

JF - MRS Advances

IS - 23

ER -

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

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