Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

Shikui Han, Xuyong Yang, Yihan Zhu, Chaoliang Tan, Xiao Zhang, Junze Chen, Ying Huang, Bo Chen, Zhimin Luo, Qinglang Ma, Melinda Sindoro, Hao Zhang, Xiaoying Qi, Hai Li, Xiao Huang, Wei Huang, Xiao Wei Sun, Yu Han, Hua Zhang

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25 Scopus citations

Abstract

Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn -WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.
Original languageEnglish (US)
Pages (from-to)10486-10490
Number of pages5
JournalAngewandte Chemie International Edition
Volume56
Issue number35
DOIs
StatePublished - Jul 24 2017

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