TY - JOUR
T1 - Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications
AU - Wen, H. C.
AU - Alshareef, Husam Niman
AU - Luan, H.
AU - Choi, K.
AU - Lysaght, P.
AU - Harris, H. R.
AU - Huffman, C.
AU - Brown, G. A.
AU - Bersuker, G.
AU - Zeitzoff, P.
AU - Huff, H.
AU - Majhi, P.
AU - Lee, B. H.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.
AB - Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.
UR - http://www.scopus.com/inward/record.url?scp=33745120161&partnerID=8YFLogxK
U2 - 10.1109/.2005.1469206
DO - 10.1109/.2005.1469206
M3 - Conference article
AN - SCOPUS:33745120161
SN - 0743-1562
VL - 2005
SP - 46
EP - 47
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
M1 - 1469206
T2 - 2005 Symposium on VLSI Technology
Y2 - 14 June 2005 through 14 June 2005
ER -