Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

H. C. Wen; Husam Niman Alshareef; H. Luan; K. Choi; P. Lysaght; H. R. Harris; C. Huffman; G. A. Brown; G. Bersuker; P. Zeitzoff; H. Huff; P. Majhi; B. H. Lee

doi:10.1109/.2005.1469206

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

H. C. Wen^*, Husam Niman Alshareef, H. Luan, K. Choi, P. Lysaght, H. R. Harris, C. Huffman, G. A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B. H. Lee

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Conference article › peer-review

27 Citations (SciVal)

Abstract

Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO₂ and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

Original language	English (US)
Article number	1469206
Pages (from-to)	46-47
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469206
State	Published - Dec 1 2005
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: Jun 14 2005 → Jun 14 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Wen, H. C., Alshareef, H. N., Luan, H., Choi, K., Lysaght, P., Harris, H. R., Huffman, C., Brown, G. A., Bersuker, G., Zeitzoff, P., Huff, H., Majhi, P., & Lee, B. H. (2005). Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications. Digest of Technical Papers - Symposium on VLSI Technology, 2005, 46-47. [1469206]. https://doi.org/10.1109/.2005.1469206

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abstract = "Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.",

author = "Wen, {H. C.} and Alshareef, {Husam Niman} and H. Luan and K. Choi and P. Lysaght and Harris, {H. R.} and C. Huffman and Brown, {G. A.} and G. Bersuker and P. Zeitzoff and H. Huff and P. Majhi and Lee, {B. H.}",

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doi = "10.1109/.2005.1469206",

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Wen, HC, Alshareef, HN, Luan, H, Choi, K, Lysaght, P, Harris, HR, Huffman, C, Brown, GA, Bersuker, G, Zeitzoff, P, Huff, H, Majhi, P & Lee, BH 2005, 'Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications', Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, 1469206, pp. 46-47. https://doi.org/10.1109/.2005.1469206

TY - JOUR

T1 - Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

AU - Wen, H. C.

AU - Alshareef, Husam Niman

AU - Luan, H.

AU - Choi, K.

AU - Lysaght, P.

AU - Harris, H. R.

AU - Huffman, C.

AU - Brown, G. A.

AU - Bersuker, G.

AU - Zeitzoff, P.

AU - Huff, H.

AU - Majhi, P.

AU - Lee, B. H.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

AB - Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

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U2 - 10.1109/.2005.1469206

DO - 10.1109/.2005.1469206

M3 - Conference article

AN - SCOPUS:33745120161

SN - 0743-1562

VL - 2005

SP - 46

EP - 47

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469206

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

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