Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis

Takeyuki Sekimoto; Shuichi Shinagawa; Yusuke Uetake; Keiichi Noda; Masahiro Deguchi; Satoshi Yotsuhashi; Kazuhiro Ohkawa

doi:10.1063/1.4910510

Tandem photo-electrode of InGaN with two Si p-n junctions for CO₂ conversion to HCOOH with the efficiency greater than biological photosynthesis

Takeyuki Sekimoto^*, Shuichi Shinagawa, Yusuke Uetake, Keiichi Noda, Masahiro Deguchi, Satoshi Yotsuhashi, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We report on a highly improved CO₂ to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.

Original language	English (US)
Article number	073902
Journal	Applied Physics Letters
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.4910510
State	Published - Feb 16 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis",

abstract = "We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.",

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AU - Sekimoto, Takeyuki

AU - Shinagawa, Shuichi

AU - Uetake, Yusuke

AU - Noda, Keiichi

AU - Deguchi, Masahiro

AU - Yotsuhashi, Satoshi

AU - Ohkawa, Kazuhiro

PY - 2015/2/16

Y1 - 2015/2/16

N2 - We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.

AB - We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.

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ER -

Tandem photo-electrode of InGaN with two Si p-n junctions for CO₂ conversion to HCOOH with the efficiency greater than biological photosynthesis

Abstract

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