Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature To of 105 K has been extracted.
Original languageEnglish (US)
JournalApplied Physics Letters
Volume109
Issue number1
DOIs
StatePublished - Jul 4 2016
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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