TY - JOUR
T1 - Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
AU - Sugiyama, Takayuki
AU - Iida, Daisuke
AU - Iwaya, Motoaki
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2010/10/1
Y1 - 2010/10/1
N2 - We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - We demonstrated high-temperature operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temperature. Distinct normally off-mode operation with a maximum drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temperature switching devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200983863
UR - http://www.scopus.com/inward/record.url?scp=78449242568&partnerID=8YFLogxK
U2 - 10.1002/pssc.200983863
DO - 10.1002/pssc.200983863
M3 - Article
SN - 1862-6351
VL - 7
SP - 2419
EP - 2422
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 10
ER -