Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Keyphrases

• Temperature Effect 100%
• P-GaN 100%
• GaN Heterostructure 100%
• Heterostructure Field-effect Transistors 100%
• High Temperature 50%
• Ambient Temperature 50%
• GaN-based 50%
• Drain Current 50%
• Switching Devices 50%
• Threshold Voltage 50%
• Small Shift 50%
• Si-based 50%
• High Temperature Operation 50%

Engineering

• Field-Effect Transistor 100%
• Heterostructures 100%
• Temperature Dependence 100%
• Current Drain 50%
• High Temperature Operations 50%
• Mode Operation 50%

Earth and Planetary Sciences

• Field Effect Transistor 100%
• Temperature Dependence 100%
• Threshold Voltage 50%
• JFET 50%