Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

Abeer Z. Barasheed; S. R. Sarath Kumar; Husam N. Alshareef

doi:10.1039/c3tc30215f

Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

Abeer Z. Barasheed, S. R. Sarath Kumar, Husam N. Alshareef

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31 Scopus citations

Abstract

In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.

Original language	English (US)
Pages (from-to)	4122
Journal	Journal of Materials Chemistry C
Volume	1
Issue number	26
DOIs	https://doi.org/10.1039/c3tc30215f
State	Published - 2013

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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title = "Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films",

abstract = "In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. {\textcopyright} The Royal Society of Chemistry 2013.",

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T1 - Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

AU - Barasheed, Abeer Z.

AU - Sarath Kumar, S. R.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013

Y1 - 2013

N2 - In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.

AB - In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.

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DO - 10.1039/c3tc30215f

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SN - 2050-7534

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SP - 4122

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 26

ER -

Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

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