@inproceedings{0925be3188084a9e80711ec816d02aa0,
title = "Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser",
abstract = "We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 μm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 μm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.",
keywords = "GaInNAs, Long wavelength VCSELs, Semiconductor lasers",
author = "Mitani, {S. M.} and Alias, {M. S.} and Yahya, {M. R.} and Mat, {A. F.A.}",
year = "2009",
doi = "10.1109/ISIE.2009.5214083",
language = "English (US)",
isbn = "9781424443499",
series = "IEEE International Symposium on Industrial Electronics",
pages = "2208--2211",
booktitle = "Proceedings - IEEE ISIE 2009, IEEE International Symposium on Industrial Electronics",
note = "IEEE International Symposium on Industrial Electronics, IEEE ISIE 2009 ; Conference date: 05-07-2009 Through 08-07-2009",
}