Temperature-induced ion kinetic energy relaxation and yield of H^- dissociative electron attachment from hydrogenated diamond films

In this paper, we report on the influence of surface temperature on low-energy H^- electron stimulated desorption occurring via dissociative electron attachment from hydrogenated diamond films. By measuring the H^- kinetic energy distribution (KED) induced by electron bombardment in the 7-18 eV range for surface temperatures ranging between 100 and 450 K, we investigate the dynamics of the desorption process. It is determined that the H^- ion yield continuously decreases with increasing temperature and that the most probable H^- kinetic energy shifts to lower energies. It is proposed that the effect of temperature on the H^-, KED and consequently, on the reduction in ion yield is predominantly due to an increase in the energy relaxation of the anion resonance and energy losses of the outgoing H^- ion through interactions with the solid's multiphonon background and collisions.