TY - JOUR
T1 - Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
AU - Zhong, Hai
AU - Wen, Yan
AU - Zhao, Yuelei
AU - Zhang, Qiang
AU - Huang, Qikun
AU - Chen, Yanxue
AU - Cai, Jianwang
AU - Zhang, Xixiang
AU - Li, Run-Wei
AU - Bai, Lihui
AU - Kang, Shishou
AU - Yan, Shishen
AU - Tian, Yufeng
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Science Foundation of China (Grant Nos. 11434006, 11774199, and 51871112), the National Basic Research Program of China (Grant No. 2015CB921502), the 111 ProjectB13029, and the Taishan Scholar Program of Shandong Province. H.Z. was supported by the King Abdullah University of Science and Technology (KAUST) during his visit to KAUST. X.X.Z. acknowledges the support from KAUST.
PY - 2018/11/14
Y1 - 2018/11/14
N2 - Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.
AB - Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.
UR - http://hdl.handle.net/10754/629913
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201806460
UR - http://www.scopus.com/inward/record.url?scp=85056476835&partnerID=8YFLogxK
U2 - 10.1002/adfm.201806460
DO - 10.1002/adfm.201806460
M3 - Article
SN - 1616-301X
VL - 29
SP - 1806460
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 2
ER -