The drift-diffusion limit for electron-phonon interaction in semiconductors

Peter A. Markowich*, Christian Schmeiser

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


A scattering operator modeling the interaction of electrons with phonons of given constant energy in semiconductors is analyzed by means of an expansion in terms of spherical harmonics. An application is the derivation of the drift-diffusion limit of the corresponding Boltzmann equation for the transport of electrons in a semiconductor crystal.

Original languageEnglish (US)
Pages (from-to)707-729
Number of pages23
JournalMathematical Models and Methods in Applied Sciences
Issue number5
StatePublished - Aug 1997
Externally publishedYes

ASJC Scopus subject areas

  • Modeling and Simulation
  • Applied Mathematics


Dive into the research topics of 'The drift-diffusion limit for electron-phonon interaction in semiconductors'. Together they form a unique fingerprint.

Cite this