The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

D. M. Graham; P. Dawson; Y. Zhang; P. M.F.J. Costa; M. J. Kappers; C. J. Humphreys; E. J. Thrush

doi:10.1002/pssc.200565246

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

D. M. Graham^*, P. Dawson, Y. Zhang, P. M.F.J. Costa, M. J. Kappers, C. J. Humphreys, E. J. Thrush

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In_0.05Ga_0.95N/Al _0.05Ga_0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes.

Original language	English (US)
Pages (from-to)	2005-2008
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565246
State	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200565246

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@article{381c5c4ff83b42e98561377f170b1412,

title = "The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures",

abstract = "We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes.",

author = "Graham, {D. M.} and P. Dawson and Y. Zhang and Costa, {P. M.F.J.} and Kappers, {M. J.} and Humphreys, {C. J.} and Thrush, {E. J.}",

year = "2006",

doi = "10.1002/pssc.200565246",

language = "English (US)",

volume = "3",

pages = "2005--2008",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

AU - Graham, D. M.

AU - Dawson, P.

AU - Zhang, Y.

AU - Costa, P. M.F.J.

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Thrush, E. J.

PY - 2006

Y1 - 2006

N2 - We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes.

AB - We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes.

UR - http://www.scopus.com/inward/record.url?scp=33746366804&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565246

DO - 10.1002/pssc.200565246

M3 - Conference article

AN - SCOPUS:33746366804

SN - 1862-6351

VL - 3

SP - 2005

EP - 2008

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

Abstract

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