The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

I. S. Roqan; E. Nogales; K. P. O'Donnell; C. Trager-Cowan; R. W. Martin; G. Halambalakis; O. Briot

doi:10.1016/j.jcrysgro.2008.05.037

The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

I. S. Roqan^*, E. Nogales, K. P. O'Donnell, C. Trager-Cowan, R. W. Martin, G. Halambalakis, O. Briot

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (∼2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm³⁺ emission. For lower substrate temperatures, Ga droplets and large (∼8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (≤0.8 at%).

Original language	English (US)
Pages (from-to)	4069-4072
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	18
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.05.037
State	Published - Aug 15 2008
Externally published	Yes

Keywords

A1. Atomic force microscopy
A1. X-ray topography
A3. Molecular beam epitaxy
B1. Rare earth compounds
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.05.037

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title = "The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE",

abstract = "During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (∼2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (∼8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (≤0.8 at%).",

keywords = "A1. Atomic force microscopy, A1. X-ray topography, A3. Molecular beam epitaxy, B1. Rare earth compounds, B2. Semiconducting gallium compounds",

author = "Roqan, {I. S.} and E. Nogales and O'Donnell, {K. P.} and C. Trager-Cowan and Martin, {R. W.} and G. Halambalakis and O. Briot",

year = "2008",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2008.05.037",

language = "English (US)",

volume = "310",

pages = "4069--4072",

journal = "Journal of Crystal Growth",

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T1 - The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

AU - Roqan, I. S.

AU - Nogales, E.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

AU - Martin, R. W.

AU - Halambalakis, G.

AU - Briot, O.

PY - 2008/8/15

Y1 - 2008/8/15

N2 - During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (∼2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (∼8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (≤0.8 at%).

AB - During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (∼2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (∼8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (≤0.8 at%).

KW - A1. Atomic force microscopy

KW - A1. X-ray topography

KW - A3. Molecular beam epitaxy

KW - B1. Rare earth compounds

KW - B2. Semiconducting gallium compounds

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U2 - 10.1016/j.jcrysgro.2008.05.037

DO - 10.1016/j.jcrysgro.2008.05.037

M3 - Article

AN - SCOPUS:49749125957

SN - 0022-0248

VL - 310

SP - 4069

EP - 4072

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 18

ER -

The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

Abstract

Keywords

ASJC Scopus subject areas

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