We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.
|Title of host publication
|2009 IEEE LEOS Annual Meeting Conference Proceedings
|Institute of Electrical and Electronics Engineers (IEEE)
|Number of pages
|Published - Oct 2009