The effects of X-ray irradiation-induced damage on reliability in MOS structures

Shi ho Kim; Ho jun Lee; Chul hi Han; Kwyro Lee; Sang soo Choi; Young jin Jeon; Enzo Di Fabrizio; Massimo Gentili

doi:10.1016/0038-1101(94)E0054-I

The effects of X-ray irradiation-induced damage on reliability in MOS structures

Shi ho Kim^*, Ho jun Lee, Chul hi Han, Kwyro Lee, Sang soo Choi, Young jin Jeon, Enzo Di Fabrizio, Massimo Gentili

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450°C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even efter forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Q_bd) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Q_bd in irradiated devices is enhanced electron trapping into the neutral traps.

Original language	English (US)
Pages (from-to)	95-99
Number of pages	5
Journal	Solid State Electronics
Volume	38
Issue number	1
DOIs	https://doi.org/10.1016/0038-1101(94)E0054-I
State	Published - Jan 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "The effects of X-ray irradiation-induced damage on reliability in MOS structures",

abstract = "The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450°C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even efter forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Qbd) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Qbd in irradiated devices is enhanced electron trapping into the neutral traps.",

author = "Kim, {Shi ho} and Lee, {Ho jun} and Han, {Chul hi} and Kwyro Lee and Choi, {Sang soo} and Jeon, {Young jin} and {Di Fabrizio}, Enzo and Massimo Gentili",

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AU - Kim, Shi ho

AU - Lee, Ho jun

AU - Han, Chul hi

AU - Lee, Kwyro

AU - Choi, Sang soo

AU - Jeon, Young jin

AU - Di Fabrizio, Enzo

AU - Gentili, Massimo

PY - 1995/1

Y1 - 1995/1

N2 - The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450°C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even efter forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Qbd) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Qbd in irradiated devices is enhanced electron trapping into the neutral traps.

AB - The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450°C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even efter forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Qbd) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Qbd in irradiated devices is enhanced electron trapping into the neutral traps.

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The effects of X-ray irradiation-induced damage on reliability in MOS structures

Abstract

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