Abstract
The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450°C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even efter forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Qbd) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Qbd in irradiated devices is enhanced electron trapping into the neutral traps.
Original language | English (US) |
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Pages (from-to) | 95-99 |
Number of pages | 5 |
Journal | Solid State Electronics |
Volume | 38 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1995 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry