The Impact of N2 Anneal on Laser Processed Silicon

Lujia Xu; Klaus Weber; Xinbo Yang; Andreas Fell; Evan Franklin

doi:10.1016/j.egypro.2015.07.107

The Impact of N₂ Anneal on Laser Processed Silicon

Lujia Xu^*, Klaus Weber, Xinbo Yang, Andreas Fell, Evan Franklin

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, the impact of the N₂ anneal on laser processed silicon was investigated using photoluminescence (PL) imaging through comparing the PL signal of laser processed samples before and after N₂ anneal. The samples capped with different dielectrics or without any dielectric (bare surface) prior to the laser processing were used, enabling the evaluation of the influence of the N₂ anneal on the defects caused both by laser thermal effect and by the existence of dielectrics. Generally, it was found that N₂ anneal is an effective way to reduce both the laser and dielectric induced defects.

Original language	English (US)
Pages (from-to)	759-765
Number of pages	7
Journal	Energy Procedia
Volume	77
DOIs	https://doi.org/10.1016/j.egypro.2015.07.107
State	Published - 2015
Externally published	Yes
Event	5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany Duration: Mar 25 2015 → Mar 27 2015

Keywords

Laser doping
N anneal
dielectric film

ASJC Scopus subject areas

General Energy

Access to Document

10.1016/j.egypro.2015.07.107

Cite this

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title = "The Impact of N2 Anneal on Laser Processed Silicon",

abstract = "In this paper, the impact of the N2 anneal on laser processed silicon was investigated using photoluminescence (PL) imaging through comparing the PL signal of laser processed samples before and after N2 anneal. The samples capped with different dielectrics or without any dielectric (bare surface) prior to the laser processing were used, enabling the evaluation of the influence of the N2 anneal on the defects caused both by laser thermal effect and by the existence of dielectrics. Generally, it was found that N2 anneal is an effective way to reduce both the laser and dielectric induced defects.",

keywords = "Laser doping, N anneal, dielectric film",

author = "Lujia Xu and Klaus Weber and Xinbo Yang and Andreas Fell and Evan Franklin",

note = "Publisher Copyright: {\textcopyright} 2015 The Authors.; 5th International Conference on Silicon Photovoltaics, SiliconPV 2015 ; Conference date: 25-03-2015 Through 27-03-2015",

year = "2015",

doi = "10.1016/j.egypro.2015.07.107",

language = "English (US)",

volume = "77",

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journal = "Energy Procedia",

issn = "1876-6102",

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TY - JOUR

T1 - The Impact of N2 Anneal on Laser Processed Silicon

AU - Xu, Lujia

AU - Weber, Klaus

AU - Yang, Xinbo

AU - Fell, Andreas

AU - Franklin, Evan

PY - 2015

Y1 - 2015

N2 - In this paper, the impact of the N2 anneal on laser processed silicon was investigated using photoluminescence (PL) imaging through comparing the PL signal of laser processed samples before and after N2 anneal. The samples capped with different dielectrics or without any dielectric (bare surface) prior to the laser processing were used, enabling the evaluation of the influence of the N2 anneal on the defects caused both by laser thermal effect and by the existence of dielectrics. Generally, it was found that N2 anneal is an effective way to reduce both the laser and dielectric induced defects.

AB - In this paper, the impact of the N2 anneal on laser processed silicon was investigated using photoluminescence (PL) imaging through comparing the PL signal of laser processed samples before and after N2 anneal. The samples capped with different dielectrics or without any dielectric (bare surface) prior to the laser processing were used, enabling the evaluation of the influence of the N2 anneal on the defects caused both by laser thermal effect and by the existence of dielectrics. Generally, it was found that N2 anneal is an effective way to reduce both the laser and dielectric induced defects.

KW - Laser doping

KW - N anneal

KW - dielectric film

UR - http://www.scopus.com/inward/record.url?scp=84948397618&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2015.07.107

DO - 10.1016/j.egypro.2015.07.107

M3 - Conference article

AN - SCOPUS:84948397618

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VL - 77

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EP - 765

JO - Energy Procedia

JF - Energy Procedia

T2 - 5th International Conference on Silicon Photovoltaics, SiliconPV 2015

Y2 - 25 March 2015 through 27 March 2015

ER -