The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Kornelius Tetzner; Ivan Isakov; Anna Regoutz; David J. Payne; Thomas D. Anthopoulos

doi:10.1039/c6tc04907a

The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors

Kornelius Tetzner^*, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas D. Anthopoulos

^*Corresponding author for this work

Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors.

Original language	English (US)
Pages (from-to)	59-64
Number of pages	6
Journal	JOURNAL OF MATERIALS CHEMISTRY C
Volume	5
Issue number	1
DOIs	https://doi.org/10.1039/c6tc04907a
State	Published - 2017

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

Access to Document

10.1039/c6tc04907a

Cite this

@article{401d901f07544f218a8047b24efeb380,

title = "The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors",

abstract = "We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.",

author = "Kornelius Tetzner and Ivan Isakov and Anna Regoutz and Payne, {David J.} and Anthopoulos, {Thomas D.}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2017",

doi = "10.1039/c6tc04907a",

language = "English (US)",

volume = "5",

pages = "59--64",

journal = "JOURNAL OF MATERIALS CHEMISTRY C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "1",

}

TY - JOUR

T1 - The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

AU - Tetzner, Kornelius

AU - Isakov, Ivan

AU - Regoutz, Anna

AU - Payne, David J.

AU - Anthopoulos, Thomas D.

PY - 2017

Y1 - 2017

N2 - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.

AB - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors.

UR - http://www.scopus.com/inward/record.url?scp=85007043701&partnerID=8YFLogxK

U2 - 10.1039/c6tc04907a

DO - 10.1039/c6tc04907a

M3 - Article

AN - SCOPUS:85007043701

SN - 2050-7534

VL - 5

SP - 59

EP - 64

JO - JOURNAL OF MATERIALS CHEMISTRY C

JF - JOURNAL OF MATERIALS CHEMISTRY C

IS - 1

ER -

The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this