Abstract
IMPATT diodes were designed and fabricated in standard CMOS technology to study the impact of the RMS value of surface roughness on the avalanche frequency. By comparing the on-chip measurements of an IMPATT diode integrated in a CPW to an integrated one with a microstrip patch antenna at the same biasing conditions, the results demonstrated a reduction in the avalanche frequency in the antenna integrated structure by 34% compared to the CPW one. Such variation is strongly associated with the increase in the conduction losses by 40%~80% based on the biasing conditions and hence the avalanche frequency.
| Original language | English (US) |
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| Title of host publication | 2019 International Applied Computational Electromagnetics Society Symposium (ACES) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| State | Published - May 13 2019 |