The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

Youngsuk Jung; R. Joseph Kline; Eric K. Lin; Daniel A. Fischer; Michael F. Toney; Martin Heeney; Iain McCulloch; Dean M. DeLongchamp

doi:10.1149/1.2908623

The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

Youngsuk Jung, R. Joseph Kline, Eric K. Lin, Daniel A. Fischer, Michael F. Toney, Martin Heeney, Iain McCulloch, Dean M. DeLongchamp

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others. © The Electrochemical Society.

Original language	English (US)
Title of host publication	ECS Transactions
Pages	113-122
Number of pages	10
DOIs	https://doi.org/10.1149/1.2908623
State	Published - Nov 18 2008
Externally published	Yes

ASJC Scopus subject areas

General Engineering

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10.1149/1.2908623

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@inproceedings{7c569cb394304773b10306bf50d37a3a,

title = "The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors",

abstract = "The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others. {\textcopyright} The Electrochemical Society.",

author = "Youngsuk Jung and {Joseph Kline}, R. and Lin, {Eric K.} and Fischer, {Daniel A.} and Toney, {Michael F.} and Martin Heeney and Iain McCulloch and DeLongchamp, {Dean M.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-02-14",

year = "2008",

month = nov,

day = "18",

doi = "10.1149/1.2908623",

language = "English (US)",

isbn = "9781566776271",

pages = "113--122",

booktitle = "ECS Transactions",

}

TY - GEN

T1 - The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

AU - Jung, Youngsuk

AU - Joseph Kline, R.

AU - Lin, Eric K.

AU - Fischer, Daniel A.

AU - Toney, Michael F.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - DeLongchamp, Dean M.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2008/11/18

Y1 - 2008/11/18

N2 - The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others. © The Electrochemical Society.

AB - The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others. © The Electrochemical Society.

UR - https://iopscience.iop.org/article/10.1149/1.2908623

UR - http://www.scopus.com/inward/record.url?scp=55949090921&partnerID=8YFLogxK

U2 - 10.1149/1.2908623

DO - 10.1149/1.2908623

M3 - Conference contribution

SN - 9781566776271

SP - 113

EP - 122

BT - ECS Transactions

ER -

The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

Abstract

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