The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

Hong Wang; Hong Yang; K. Radhakrishnan; Tien Khee Ng; Wai Chye Cheong

doi:10.1109/TED.2003.821381

The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

Hong Wang^*, Hong Yang, K. Radhakrishnan, Tien Khee Ng, Wai Chye Cheong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The influence of emitter material on silicon-nitride (SiN) passivation-induced degradation in InP-based heterojunction bipolar transistors (HBTs) has been studied. It has been found that, compared to InP. InAlAs has a much higher resistance to NH₃-related plasma-induced damage. InP-based HBTs using InAlAs as the emitter can effectively suppress the degradation of device performance caused by dielectric passivation giving least deterioration on the device characteristics compared to the previously reported results concerning the passivation quality using different passivation schemes. Short-term high temperature and high current electrical stress tests indicates that the SiN-passivated devices using InAlAs as the emitter may have better stability than those with InP emitter. Our results suggest that engineering of emitter layer structures could be an alternative approach to suppress passivation-induced degradation in InP-based HBTs.

Original language	English (US)
Pages (from-to)	8-13
Number of pages	6
Journal	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume	51
Issue number	1
DOIs	https://doi.org/10.1109/TED.2003.821381
State	Published - Jan 2004
Externally published	Yes

Keywords

Heterojunction bipolar transistor (HBT)
InAlAS
InP
Passivation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2003.821381

Cite this

@article{6af152b199064739b8c82829c85c1cd0,

title = "The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs",

abstract = "The influence of emitter material on silicon-nitride (SiN) passivation-induced degradation in InP-based heterojunction bipolar transistors (HBTs) has been studied. It has been found that, compared to InP. InAlAs has a much higher resistance to NH3-related plasma-induced damage. InP-based HBTs using InAlAs as the emitter can effectively suppress the degradation of device performance caused by dielectric passivation giving least deterioration on the device characteristics compared to the previously reported results concerning the passivation quality using different passivation schemes. Short-term high temperature and high current electrical stress tests indicates that the SiN-passivated devices using InAlAs as the emitter may have better stability than those with InP emitter. Our results suggest that engineering of emitter layer structures could be an alternative approach to suppress passivation-induced degradation in InP-based HBTs.",

keywords = "Heterojunction bipolar transistor (HBT), InAlAS, InP, Passivation",

author = "Hong Wang and Hong Yang and K. Radhakrishnan and Ng, {Tien Khee} and Cheong, {Wai Chye}",

year = "2004",

month = jan,

doi = "10.1109/TED.2003.821381",

language = "English (US)",

volume = "51",

pages = "8--13",

journal = "IEEE TRANSACTIONS ON ELECTRON DEVICES",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

AU - Wang, Hong

AU - Yang, Hong

AU - Radhakrishnan, K.

AU - Ng, Tien Khee

AU - Cheong, Wai Chye

PY - 2004/1

Y1 - 2004/1

N2 - The influence of emitter material on silicon-nitride (SiN) passivation-induced degradation in InP-based heterojunction bipolar transistors (HBTs) has been studied. It has been found that, compared to InP. InAlAs has a much higher resistance to NH3-related plasma-induced damage. InP-based HBTs using InAlAs as the emitter can effectively suppress the degradation of device performance caused by dielectric passivation giving least deterioration on the device characteristics compared to the previously reported results concerning the passivation quality using different passivation schemes. Short-term high temperature and high current electrical stress tests indicates that the SiN-passivated devices using InAlAs as the emitter may have better stability than those with InP emitter. Our results suggest that engineering of emitter layer structures could be an alternative approach to suppress passivation-induced degradation in InP-based HBTs.

AB - The influence of emitter material on silicon-nitride (SiN) passivation-induced degradation in InP-based heterojunction bipolar transistors (HBTs) has been studied. It has been found that, compared to InP. InAlAs has a much higher resistance to NH3-related plasma-induced damage. InP-based HBTs using InAlAs as the emitter can effectively suppress the degradation of device performance caused by dielectric passivation giving least deterioration on the device characteristics compared to the previously reported results concerning the passivation quality using different passivation schemes. Short-term high temperature and high current electrical stress tests indicates that the SiN-passivated devices using InAlAs as the emitter may have better stability than those with InP emitter. Our results suggest that engineering of emitter layer structures could be an alternative approach to suppress passivation-induced degradation in InP-based HBTs.

KW - Heterojunction bipolar transistor (HBT)

KW - InAlAS

KW - InP

KW - Passivation

UR - http://www.scopus.com/inward/record.url?scp=0742269332&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.821381

DO - 10.1109/TED.2003.821381

M3 - Article

AN - SCOPUS:0742269332

SN - 0018-9383

VL - 51

SP - 8

EP - 13

JO - IEEE TRANSACTIONS ON ELECTRON DEVICES

JF - IEEE TRANSACTIONS ON ELECTRON DEVICES

IS - 1

ER -

The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this