The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

Mohammed Zahed Mustafa Khan; Tien Khee Ng; Udo Schwingenschlögl; Boon S. Ooi

doi:10.1109/HONET.2010.5715755

The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

Mohammed Zahed Mustafa Khan, Tien Khee Ng, Udo Schwingenschlögl, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.

Original language	English (US)
Title of host publication	7th International Symposium on High-capacity Optical Networks and Enabling Technologies
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	112-114
Number of pages	3
ISBN (Print)	9781424499243
DOIs	https://doi.org/10.1109/HONET.2010.5715755
State	Published - Dec 2010

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Khan, M. Z. M., Ng, T. K., Schwingenschlögl, U., & Ooi, B. S. (2010). The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. In 7th International Symposium on High-capacity Optical Networks and Enabling Technologies (pp. 112-114). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/HONET.2010.5715755

Khan, Mohammed Zahed Mustafa ; Ng, Tien Khee ; Schwingenschlögl, Udo et al. / The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. 7th International Symposium on High-capacity Optical Networks and Enabling Technologies. Institute of Electrical and Electronics Engineers (IEEE), 2010. pp. 112-114

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title = "The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers",

abstract = "We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. {\textcopyright} 2010 IEEE.",

author = "Khan, {Mohammed Zahed Mustafa} and Ng, {Tien Khee} and Udo Schwingenschl{\"o}gl and Ooi, {Boon S.}",

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Khan, MZM, Ng, TK, Schwingenschlögl, U & Ooi, BS 2010, The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. in 7th International Symposium on High-capacity Optical Networks and Enabling Technologies. Institute of Electrical and Electronics Engineers (IEEE), pp. 112-114. https://doi.org/10.1109/HONET.2010.5715755

The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. / Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Schwingenschlögl, Udo et al.
7th International Symposium on High-capacity Optical Networks and Enabling Technologies. Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 112-114.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

AU - Khan, Mohammed Zahed Mustafa

AU - Ng, Tien Khee

AU - Schwingenschlögl, Udo

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2010/12

Y1 - 2010/12

N2 - We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.

AB - We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.

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BT - 7th International Symposium on High-capacity Optical Networks and Enabling Technologies

PB - Institute of Electrical and Electronics Engineers (IEEE)

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Khan MZM, Ng TK, Schwingenschlögl U , Ooi BS. The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. In 7th International Symposium on High-capacity Optical Networks and Enabling Technologies. Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 112-114 doi: 10.1109/HONET.2010.5715755

The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

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