TY - JOUR
T1 - The interplay between dopants and oxygen vacancies in the magnetism of V-doped TiO2
AU - Grau-Crespo, Ricardo
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work made use of the facilities of HECToR, the UK's national high-performance computing service, via RGC's membership of the UK's HPC Materials Chemistry Consortium, which is funded by EPSRC (EP/F067496).
PY - 2011/8/3
Y1 - 2011/8/3
N2 - Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V 4 + species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic order cannot be reached via low-concentration doping in the non-defective oxide. Oxygen vacancies can introduce additional magnetic centres, and we show here that one of the effects of vanadium doping is to reduce the formation energies of these defects. In the presence of both V dopants and O vacancies all the spins tend to align with the same orientation. We conclude that V doping favours the ferromagnetic behaviour of TiO2 not only by introducing spins associated with the dopant centres but also by increasing the concentration of oxygen vacancies with respect to the pure oxide. © 2001 IOP Publishing Ltd.
AB - Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V 4 + species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic order cannot be reached via low-concentration doping in the non-defective oxide. Oxygen vacancies can introduce additional magnetic centres, and we show here that one of the effects of vanadium doping is to reduce the formation energies of these defects. In the presence of both V dopants and O vacancies all the spins tend to align with the same orientation. We conclude that V doping favours the ferromagnetic behaviour of TiO2 not only by introducing spins associated with the dopant centres but also by increasing the concentration of oxygen vacancies with respect to the pure oxide. © 2001 IOP Publishing Ltd.
UR - http://hdl.handle.net/10754/561835
UR - http://arxiv.org/abs/arXiv:1105.1289v1
UR - http://www.scopus.com/inward/record.url?scp=80051916326&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/23/33/334216
DO - 10.1088/0953-8984/23/33/334216
M3 - Article
C2 - 21813944
SN - 0953-8984
VL - 23
SP - 334216
JO - Journal of Physics: Condensed Matter
JF - Journal of Physics: Condensed Matter
IS - 33
ER -