The largest QWI in the InGaP/InAlGaP laser structure using high compressive strain at elevated temperatures

M. A. Majid

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we report the largest bandgap blueshift of 320meV (~105nm) novel quantum well intermixing (QWI) technique in the InGaP/AlInGaP single quantum-well laser structure. We applied external compressive strain using a thick SiO2 cap with a thickness = of 1000 nm, annealed at 950°C for the number of cycles from 30-240s of annealing duration to enhance the QWI process. Using this method, wavelength tunability over a range of 640nm to 545nm (320meV) was demonstrated. The emission around ~545nm is the first demonstration of the photoluminescence in the green emission region on InGaP/InAlGaP QW structures.
Original languageEnglish (US)
Title of host publication2020 11th IEEE Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON)
PublisherIEEE
Pages0833-0836
Number of pages4
ISBN (Print)9781728196565
DOIs
StatePublished - Dec 25 2020
Externally publishedYes

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