The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder

Matthijs P. De Haas; John M. Warman; Thomas D. Anthopoulos; Dago M. De Leeuw

doi:10.1002/adfm.200500882

The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder

Matthijs P. De Haas^*, John M. Warman, Thomas D. Anthopoulos, Dago M. De Leeuw

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The mobility and decay kinetics of charge carriers produced by nanosecond pulsed ionization of a microcrystalline powder sample of phenyl-C₆₁ -butyric acid methyl ester (PCBM) have been investigated by time-resolved microwave conductivity. The sum of the electron and hole trap-free mobilities within crystallites is between 0.04 and 0.3 cm² V^-1 s ^-1 at room temperature with an activation energy of 0.066 eV. The decay of the conductivity, which takes place over a timcscale of milliseconds at room temperature, is controlled mainly by charge-carrier trapping with an activation energy of 0.53 eV. An upper limit of 1 × 10^-18 m³s^-1 is estimated for the rate coefficient of charge recombination, which is more than four orders of magnitude lower than expected for diffusion-controlled recombination, indicating PCBM to be an "indirect bandgap" semiconductor.

Original language	English (US)
Pages (from-to)	2274-2280
Number of pages	7
Journal	Advanced Functional Materials
Volume	16
Issue number	17
DOIs	https://doi.org/10.1002/adfm.200500882
State	Published - Nov 3 2006
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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title = "The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder",

abstract = "The mobility and decay kinetics of charge carriers produced by nanosecond pulsed ionization of a microcrystalline powder sample of phenyl-C61 -butyric acid methyl ester (PCBM) have been investigated by time-resolved microwave conductivity. The sum of the electron and hole trap-free mobilities within crystallites is between 0.04 and 0.3 cm2 V-1 s -1 at room temperature with an activation energy of 0.066 eV. The decay of the conductivity, which takes place over a timcscale of milliseconds at room temperature, is controlled mainly by charge-carrier trapping with an activation energy of 0.53 eV. An upper limit of 1 × 10-18 m3s-1 is estimated for the rate coefficient of charge recombination, which is more than four orders of magnitude lower than expected for diffusion-controlled recombination, indicating PCBM to be an {"}indirect bandgap{"} semiconductor.",

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AU - De Haas, Matthijs P.

AU - Warman, John M.

AU - Anthopoulos, Thomas D.

AU - De Leeuw, Dago M.

PY - 2006/11/3

Y1 - 2006/11/3

N2 - The mobility and decay kinetics of charge carriers produced by nanosecond pulsed ionization of a microcrystalline powder sample of phenyl-C61 -butyric acid methyl ester (PCBM) have been investigated by time-resolved microwave conductivity. The sum of the electron and hole trap-free mobilities within crystallites is between 0.04 and 0.3 cm2 V-1 s -1 at room temperature with an activation energy of 0.066 eV. The decay of the conductivity, which takes place over a timcscale of milliseconds at room temperature, is controlled mainly by charge-carrier trapping with an activation energy of 0.53 eV. An upper limit of 1 × 10-18 m3s-1 is estimated for the rate coefficient of charge recombination, which is more than four orders of magnitude lower than expected for diffusion-controlled recombination, indicating PCBM to be an "indirect bandgap" semiconductor.

AB - The mobility and decay kinetics of charge carriers produced by nanosecond pulsed ionization of a microcrystalline powder sample of phenyl-C61 -butyric acid methyl ester (PCBM) have been investigated by time-resolved microwave conductivity. The sum of the electron and hole trap-free mobilities within crystallites is between 0.04 and 0.3 cm2 V-1 s -1 at room temperature with an activation energy of 0.066 eV. The decay of the conductivity, which takes place over a timcscale of milliseconds at room temperature, is controlled mainly by charge-carrier trapping with an activation energy of 0.53 eV. An upper limit of 1 × 10-18 m3s-1 is estimated for the rate coefficient of charge recombination, which is more than four orders of magnitude lower than expected for diffusion-controlled recombination, indicating PCBM to be an "indirect bandgap" semiconductor.

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The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder

Abstract

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