The Role of Surface Tension in the Crystallization of Metal Halide Perovskites

Ayan A. Zhumekenov; Victor M. Burlakov; Makhsud I. Saidaminov; Abdulilah Alofi; Mohammed Haque; Bekir Turedi; Bambar Davaasuren; Ibrahim Dursun; Nam Chul Cho; Ahmed M. El-Zohry; Michele de Bastiani; Andrea Giugni; Bruno Torre; Enzo M. Di Fabrizio; Omar F. Mohammed; Alexander Rothenberger; Tao Wu; Alain Goriely; Osman Bakr

doi:10.1021/acsenergylett.7b00468

The Role of Surface Tension in the Crystallization of Metal Halide Perovskites

Ayan A. Zhumekenov, Victor M. Burlakov, Makhsud I. Saidaminov, Abdulilah Alofi, Mohammed Haque, Bekir Turedi, Bambar Davaasuren, Ibrahim Dursun, Nam Chul Cho, Ahmed M. El-Zohry, Michele de Bastiani, Andrea Giugni, Bruno Torre, Enzo M. Di Fabrizio, Omar F. Mohammed, Alexander Rothenberger, Tao Wu, Alain Goriely, Osman Bakr

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Abstract

The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift towards single crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization (ITC). Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+; X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (~5-10 µm). Our work paves the way to control the crystallization process of perovskites, including thin film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.

Original language	English (US)
Pages (from-to)	1782-1788
Number of pages	7
Journal	ACS Energy Letters
Volume	2
Issue number	8
DOIs	https://doi.org/10.1021/acsenergylett.7b00468
State	Published - Jul 18 2017

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https://repository.kaust.edu.sa/bitstream/10754/625190/1/acsenergylett.7b00468.pdf

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Zhumekenov, A. A., Burlakov, V. M., Saidaminov, M. I., Alofi, A., Haque, M., Turedi, B., Davaasuren, B., Dursun, I., Cho, N. C., El-Zohry, A. M., de Bastiani, M., Giugni, A., Torre, B., Di Fabrizio, E. M., Mohammed, O. F., Rothenberger, A., Wu, T., Goriely, A., & Bakr, O. (2017). The Role of Surface Tension in the Crystallization of Metal Halide Perovskites. ACS Energy Letters, 2(8), 1782-1788. https://doi.org/10.1021/acsenergylett.7b00468

@article{829be220fde64f51985d7a2c9997f95f,

title = "The Role of Surface Tension in the Crystallization of Metal Halide Perovskites",

abstract = "The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift towards single crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization (ITC). Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+; X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (~5-10 µm). Our work paves the way to control the crystallization process of perovskites, including thin film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.",

author = "Zhumekenov, {Ayan A.} and Burlakov, {Victor M.} and Saidaminov, {Makhsud I.} and Abdulilah Alofi and Mohammed Haque and Bekir Turedi and Bambar Davaasuren and Ibrahim Dursun and Cho, {Nam Chul} and El-Zohry, {Ahmed M.} and {de Bastiani}, Michele and Andrea Giugni and Bruno Torre and {Di Fabrizio}, {Enzo M.} and Mohammed, {Omar F.} and Alexander Rothenberger and Tao Wu and Alain Goriely and Osman Bakr",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank Dr. Murali Banavoth for assistance with Scanning Electron Microscopy, Dr. Xiaohe Miao for assistance with high-resolution X-ray diffraction and Bo Tang for many fruitful discussions. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).",

year = "2017",

month = jul,

day = "18",

doi = "10.1021/acsenergylett.7b00468",

language = "English (US)",

volume = "2",

pages = "1782--1788",

journal = "ACS Energy Letters",

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Zhumekenov, AA, Burlakov, VM, Saidaminov, MI, Alofi, A, Haque, M, Turedi, B, Davaasuren, B, Dursun, I, Cho, NC, El-Zohry, AM, de Bastiani, M, Giugni, A, Torre, B, Di Fabrizio, EM, Mohammed, OF, Rothenberger, A, Wu, T, Goriely, A & Bakr, O 2017, 'The Role of Surface Tension in the Crystallization of Metal Halide Perovskites', ACS Energy Letters, vol. 2, no. 8, pp. 1782-1788. https://doi.org/10.1021/acsenergylett.7b00468

TY - JOUR

T1 - The Role of Surface Tension in the Crystallization of Metal Halide Perovskites

AU - Zhumekenov, Ayan A.

AU - Burlakov, Victor M.

AU - Saidaminov, Makhsud I.

AU - Alofi, Abdulilah

AU - Haque, Mohammed

AU - Turedi, Bekir

AU - Davaasuren, Bambar

AU - Dursun, Ibrahim

AU - Cho, Nam Chul

AU - El-Zohry, Ahmed M.

AU - de Bastiani, Michele

AU - Giugni, Andrea

AU - Torre, Bruno

AU - Di Fabrizio, Enzo M.

AU - Mohammed, Omar F.

AU - Rothenberger, Alexander

AU - Wu, Tao

AU - Goriely, Alain

AU - Bakr, Osman

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank Dr. Murali Banavoth for assistance with Scanning Electron Microscopy, Dr. Xiaohe Miao for assistance with high-resolution X-ray diffraction and Bo Tang for many fruitful discussions. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).

PY - 2017/7/18

Y1 - 2017/7/18

N2 - The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift towards single crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization (ITC). Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+; X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (~5-10 µm). Our work paves the way to control the crystallization process of perovskites, including thin film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.

AB - The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift towards single crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization (ITC). Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+; X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (~5-10 µm). Our work paves the way to control the crystallization process of perovskites, including thin film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.

UR - http://hdl.handle.net/10754/625190

UR - http://pubs.acs.org/doi/abs/10.1021/acsenergylett.7b00468

UR - http://www.scopus.com/inward/record.url?scp=85030976528&partnerID=8YFLogxK

U2 - 10.1021/acsenergylett.7b00468

DO - 10.1021/acsenergylett.7b00468

M3 - Article

SN - 2380-8195

VL - 2

SP - 1782

EP - 1788

JO - ACS Energy Letters

JF - ACS Energy Letters

IS - 8

ER -

The Role of Surface Tension in the Crystallization of Metal Halide Perovskites

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