TY - GEN
T1 - Theoretical Analysis of Dielectric Assisted Tamm Mode Excitation
AU - Goyal, Amit Kumar
AU - Pradhan, K. P.
AU - Massoud, Yehia Mahmoud
N1 - KAUST Repository Item: Exported on 2022-12-26
PY - 2022/11/8
Y1 - 2022/11/8
N2 - In this paper, a dielectric material assisted excitation mechanism is proposed to confine Tamm Modes at the dielectric-air interface. The performance analysis of proposed structure is performed using transfer matrix method (TMM). The design comprises a bilayer one-dimensional photonic crystal structure having a top defect layer. The defect layer thickness, and incident angles are optimized to confirm the Tamm mode confinement at an operating wavelength of 632.8nm. The proposed structure shows a strong Tamm mode localization for a defect layer thickness of 210nm. Whereas an evanescent Tamm mode is also excited for a lower defect layer thickness of around 170nm.
AB - In this paper, a dielectric material assisted excitation mechanism is proposed to confine Tamm Modes at the dielectric-air interface. The performance analysis of proposed structure is performed using transfer matrix method (TMM). The design comprises a bilayer one-dimensional photonic crystal structure having a top defect layer. The defect layer thickness, and incident angles are optimized to confirm the Tamm mode confinement at an operating wavelength of 632.8nm. The proposed structure shows a strong Tamm mode localization for a defect layer thickness of 210nm. Whereas an evanescent Tamm mode is also excited for a lower defect layer thickness of around 170nm.
UR - http://hdl.handle.net/10754/685680
UR - https://ieeexplore.ieee.org/document/9928633/
UR - http://www.scopus.com/inward/record.url?scp=85142928465&partnerID=8YFLogxK
U2 - 10.1109/NANO54668.2022.9928633
DO - 10.1109/NANO54668.2022.9928633
M3 - Conference contribution
SN - 978-1-6654-5226-7
SP - 257
EP - 260
BT - 2022 IEEE 22nd International Conference on Nanotechnology (NANO)
PB - IEEE
ER -